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| High Voltage Transistors MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520 Base Current Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO 6.0 5.0 IB IC PD 250 500 625 5.0 1.5 12 -55 to +150 mAdc mAdc mW mW/C Watts mW/C C 2N6515 250 250 2N6519 300 300 2N6517 2N6520 350 350 Unit Vdc Vdc Vdc NPN 2N6515 2N6517 PNP 2N6519 2N6520 Voltage and current are negative for PNP transistors PD TJ, Tstg 1 2 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case COLLECTOR 3 2 BASE NPN 1 EMITTER 1 EMITTER 2 BASE PNP Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W COLLECTOR 3 CASE 29-04, STYLE 1 TO-92 (TO-226AA) ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 2N6515 2N6519 2N6517, 2N6520 V(BR)CBO 2N6515 2N6519 2N6517, 2N6520 V(BR)EBO 2N6515, 2N6517 2N6519, 2N6520 6.0 5.0 -- -- 250 300 350 -- -- -- Vdc 250 300 350 -- -- -- Vdc Vdc Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0 ) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. (c) Semiconductor Components Industries, LLC, 2001 1 February, 2001 - Rev. 2 Publication Order Number: 2N6515/D NPN 2N6515 2N6517 PNP 2N6519 2N6520 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS (Continued) Collector Cutoff Current (VCB = 150 Vdc, IE = 0) (VCB = 200 Vdc, IE = 0) (VCB = 250 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) ICBO 2N6515 2N6519 2N6517, 2N6520 IEBO 2N6515, 2N6517 2N6519, 2N6520 -- -- 50 50 -- -- -- 50 50 50 nAdc nAdc ON CHARACTERISTICS(1) DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) hFE 2N6515 2N6519 2N6517, 2N6520 2N6515 2N6519 2N6517, 2N6520 2N6515 2N6519 2N6517, 2N6520 2N6515 2N6519 2N6517, 2N6520 2N6515 2N6519 2N6517, 2N6520 VCE(sat) -- -- -- -- VBE(sat) -- -- -- VBE(on) -- 0.75 0.85 0.90 2.0 Vdc 0.30 0.35 0.50 1.0 Vdc 35 30 20 50 45 30 50 45 30 45 40 20 25 20 15 -- -- -- -- -- -- 300 270 200 220 200 200 -- -- -- Vdc -- (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) (IC = 50 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) Base-Emitter On Voltage (IC = 100 mAdc, VCE = 10 Vdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product(1) (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) Collector-Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N6515, 2N6517 2N6519, 2N6520 fT Ccb Ceb -- -- 80 100 40 -- 200 6.0 MHz pF pF SWITCHING CHARACTERISTICS Turn-On Time (VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc) Turn-Off Time (VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. ton toff -- -- 200 3.5 s s http://onsemi.com 2 NPN 2N6515 2N6517 PNP 2N6519 2N6520 NPN 2N6515 200 VCE = 10 V TJ = 125C hFE , DC CURRENT GAIN 200 VCE = -10 V PNP 2N6519 TJ = 125C 25C -55C hFE , DC CURRENT GAIN 100 70 50 25C 100 70 50 -55C 30 20 1.0 30 20 -1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 1. DC Current Gain 2N6517 200 VCE = 10 V TJ = 125C hFE , DC CURRENT GAIN 200 VCE = -10 V 100 70 50 30 20 2N6520 TJ = 125C 25C -55C hFE , DC CURRENT GAIN 100 70 50 30 20 25C -55C 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 10 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 2. DC Current Gain BANDWIDTH PRODUCT (MHz) 100 70 50 TJ = 25C VCE = 20 V f = 20 MHz BANDWIDTH PRODUCT (MHz) 2N6515, 2N6517 2N6519, 2N6520 100 70 50 TJ = 25C VCE = -20 V f = 20 MHz 30 20 30 20 f T, CURRENT-GAIN 10 1.0 f T, CURRENT-GAIN 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 10 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 3. Current-Gain -- Bandwidth Product http://onsemi.com 3 NPN 2N6515 2N6517 PNP 2N6519 2N6520 NPN 2N6515, 2N6517 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0 2.0 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 5.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V TJ = 25C -1.4 -1.2 V, VOLTAGE (VOLTS) -1.0 -0.8 -0.6 -0.4 -0.2 0 -1.0 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 5.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = -10 V TJ = 25C PNP 2N6519, 2N6520 Figure 4. "On" Voltages 2N6515, 2N6517 RV, TEMPERATURE COEFFICIENTS (mV/C) 2.0 1.5 1.0 0.5 0 RVC for VCE(sat) -55C to 25C -55C to 125C RVB for VBE 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 IC + 10 IB 25C to 125C RV, TEMPERATURE COEFFICIENTS (mV/C) 2.5 2.5 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 -1.0 RVC for VCE(sat) RVB for VBE 2N6519, 2N6520 IC + 10 IB 25C to 125C -55C to 25C -0.5 -1.0 -1.5 -2.0 -2.5 1.0 -55C to 125C -50 -70 -100 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) Figure 5. Temperature Coefficients 2N6515, 2N6517 100 70 50 C, CAPACITANCE (pF) 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 200 TJ = 25C C, CAPACITANCE (pF) Ceb 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 -0.2 2N6519, 2N6520 Ceb TJ = 25C Ccb Ccb -0.5 -1.0 -2.0 -5.0 -10 -20 -50 VR, REVERSE VOLTAGE (VOLTS) -100 -200 Figure 6. Capacitance http://onsemi.com 4 NPN 2N6515 2N6517 PNP 2N6519 2N6520 NPN 2N6515, 2N6517 1.0 k 700 500 300 t, TIME (ns) 200 100 70 50 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VCE(off) = 100 V IC/IB = 5.0 TJ = 25C t, TIME (ns) 1.0 k 700 500 300 200 100 70 50 30 20 10 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 tr PNP 2N6519, 2N6520 td @ VBE(off) = 2.0 V VCE(off) = -100 V IC/IB = 5.0 TJ = 25C td @ VBE(off) = 2.0 V tr Figure 7. Turn-On Time 2N6515, 2N6517 10 k 7.0 k 5.0 k 3.0 k t, TIME (ns) 2.0 k 1.0 k 700 500 300 200 100 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 tf VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C 2.0 k ts 1.0 k 700 500 300 200 100 70 50 30 20 -1.0 ts 2N6519, 2N6520 tf VCE(off) = -100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 8. Turn-Off Time http://onsemi.com 5 NPN 2N6515 2N6517 PNP 2N6519 2N6520 +VCC VCC ADJUSTED FOR VCE(off) = 100 V 1.0 k 2.2 k 20 k +10.8 V 50 SAMPLING SCOPE 50 -9.2 V PULSE WIDTH 100 s tr, tf 5.0 ns DUTY CYCLE 1.0% FOR PNP TEST CIRCUIT, REVERSE ALL VOLTAGE POLARITIES 1/2MSD7000 APPROXIMATELY -1.35 V (ADJUST FOR V(BE)off = 2.0 V) Figure 9. Switching Time Test Circuit ( ), RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 D = 0.5 0.2 SINGLE PULSE SINGLE PULSE ZJC(t) = r(t) * RJC TJ(pk) - TC = P(pk) ZJC(t) ZJA(t) = r(t) * RJA TJ(pk) - TA = P(pk) ZJA(t) 0.1 0.05 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0 k 2.0 k 5.0 k 10 k Figure 10. Thermal Response 500 IC, COLLECTOR CURRENT (mA) 200 100 50 20 10 5.0 2.0 1.0 0.5 0.5 1.0 TA = 25C TC = 25C 100 ms CURRENT LIMIT THERMAL LIMIT (PULSE CURVES @ TC = 25C) SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 2N6515 2N6519 2N6517, 2N6520 100 s 10 s 1.0 ms FIGURE A tP PP PP t1 1/f 500 t DUTY CYCLE + t1 f + 1 tP PEAK PULSE POWER = PP 2.0 5.0 10 20 50 100 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 11. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data PACKAGE DIMENSIONS http://onsemi.com 6 NPN 2N6515 2N6517 PNP 2N6519 2N6520 CASE 029-04 (TO-226AA) ISSUE AD A R P SEATING PLANE B F L K D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- XX G H V 1 J C N N SECTION X-X DIM A B C D F G H J K L N P R V STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 7 NPN 2N6515 2N6517 PNP 2N6519 2N6520 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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